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| 2SC1342 Silicon NPN Epitaxial Planar Application * VHF amplifier, mixer * Local oscollator Outline TO-92 (2) 1. Emitter 2. Collector 3. Base 3 2 1 2SC1342 Absolute Maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 30 20 4 30 100 150 -55 to +150 Unit V V V mA mW C C Electrical Characteristics (Ta = 25C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 30 20 4 -- 1 Typ -- -- -- -- -- 0.8 1.1 20 320 5.5 0.9 17 Max -- -- -- 0.5 200 1.2 1.5 35 -- 8.5 1.2 -- Unit V V V A Test conditions I C = 10 A, IE = 0 I C = 1 mA, RBE = I E = 10 A, IC = 0 VCB = 10 V, IE = 0 VCE = 6 V, IC = 1 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Collector output capacitance Base time constant Gain bandwidth product Noise figure Reverse transfer capacitance Power gain V(BR)EBO I CBO hFE* 35 -- -- -- 150 -- -- 13 VCE(sat) Cob rbb' fT NF Cre PG *CC V pF ps MHz dB pF dB I C = 10 mA, IB = 1 mA VCB = 10 V, IE = 0, f = 1 MHz VCB = 6 V, IC = 1 mA, f = 31.8 MHz VCE = 6 V, IC = 1 mA VCE = 6 V, IC = 1 mA, f = 100 MHz, Rg = 50 VCE = 10 V, IE = -1 mA, f = 1 MHz VCE = 6 V, IC = 1 mA, f = 100 MHz, Rg = 100 , RL = 550 , Unneutralized Note: A 1. The 2SC1342 is grouped by h FE as follows. B 60 to 120 C 100 to 200 35 to 70 2 2SC1342 Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 150 Collector Current IC (mA) Typical Output Characteristics (1) 20 240 200 160 180 140 120 100 80 60 40 4 20 A IB = 0 0 50 100 150 Ambient Temperature Ta (C) 0 4 8 12 16 20 Collector to Emitter Voltage VCE (V) PC = 100 mW 16 100 12 8 50 Typical Output Characteristics (2) 5 50 20 40 Typical Transfer Characteristics (1) Collector Current IC (mA) 4 Collector Current IC (mA) 30 16 VCE = 6 V 3 20 12 2 10 A 8 1 IB = 0 0 4 8 12 16 20 Collector to Emitter Voltage VCE (V) 4 0 0.60 0.64 0.68 0.72 0.76 0.80 Base to Emitter Voltage VBE (V) 3 2SC1342 Typical Transfer Characteristics (2) 5 DC Current Transfer Ratio hFE Collector Current IC (mA) 140 VCE = 6 V 120 100 80 60 40 20 0 0.1 0.2 0.5 1.0 2 5 10 Collector Current IC (mA) DC Current Transfer Ratio vs. Collector Current 4 VCE = 6 V 3 2 1 0 0.60 0.64 0.68 0.72 0.76 0.80 Base to Emitter Voltage VBE (V) 20 Collector Output Capacitance vs. Collector to Base Voltage f = 1 MHz IE = 0 Reverse Transfer Capacitance Cre (pF) Collector Output Capacitance Cob (pF) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.1 0.2 0.5 1.0 2 5 10 20 Collector to Base Voltage VCB (V) 2.8 2.4 2.0 1.6 1.2 0.8 0.4 Reverse Transfer Capacitance vs. Collector to Emitter Voltage f = 1 MHz IE = -1 mA 0 0.1 0.2 0.5 1.0 2 5 10 20 Collector to Emitter Voltage VCE (V) 4 2SC1342 Reverse Transfer Capacitance vs. Emitter Current Reverse Transfer Capacitance Cre (pF) 1.0 Gain Bandwidth Product fT (MHz) 450 400 350 300 250 200 150 100 50 0 0.1 0.2 0.5 1.0 2 5 10 20 Collector Current IC (mA) VCE = 6 V Gain Bandwidth Product vs. Collector Current 0.8 0.6 0.4 VCE = 10 V f = 1 MHz 0.2 0 -0.1 -0.2 -0.5 -1.0 -2 Emitter Current IE (mA) -5 Noise Figure vs. Collector to Emitter Voltage 14 12 Noise Figure NF (dB) 10 8 6 4 2 0 0.1 0.2 0.5 1.0 2 5 10 20 Collector to Emitter Voltage VCE (V) IC = 1 mA f = 100 MHz Rg = 50 Noise Figure NF (dB) 12 10 8 6 4 2 0 0.1 Noise Figure vs. Collector Current VCE = 6 V f = 100 MHz Rg = 50 0.2 0.5 1.0 2 5 Collector Current IC (mA) 10 Power Gain Test Circuit IN f = 100 MHz Rg = 100 300 p D.U.T. 10 p max 0.1 OUT RL = 550 3k 500 0.01 0.01 0.01 VCC Unit R : C:F VEE 5 2SC1342 Small Signal y Parameters (VCE = 6V, IC = 1 mA, Emitter Common Ta = 25C) Item Input admittance Reverse transfer admittance Forward transfer admittance Output admittance Symbol yie yre yfe yoe f = 50 MHz 1.8 + j5.5 -0.022 - j0.26 34 - j12 0.1 + j0.5 f = 100 MHz 4.3 + j9.9 -0.04 - j0.52 28 - j19 0.15 + j0.9 f = 200 MHz 11.5 + j15.25 -0.105 - j0.96 15.5 - j25 0.21 + j1.45 Unit mS Input Admittance vs. Frequency 28 Input Suceptance bie (mS) 24 20 16 12 100 70 f = 50 MHz 5 mA 3 mA 8 2 mA 4 IC = 1 mA 0 6 12 18 24 30 36 Input Conductance gie (mS) 42 200 300 yie = gie + jbie VCE = 6 V Reverse Transfer Admittance vs. Frequency Reverse Transfer Conductance gre (mS) -0.3 -0.25 -0.2 -0.15 -0.1 -0.05 0 Reverse Transfer Suceptance bre (mS) 0.6 f = 50 MHz yre = gre + jbre VCE = 6 V 70 100 -0.4 -0.8 200 IC = 5 mA 300 321 -1.2 -1.6 -2.0 Forward Transfer Admittance vs. Frequency Forward Transfer Conductance gfe (mS) Output Suceptance boe (mS) Forward Transfer Suceptance bfe (mS) -20 0 -20 0 20 40 IC = 1 mA 2 3 300 -60 200 100 -80 70 5 f = 50 MHz 0 -100 60 80 100 3.0 2.5 2.0 1.5 1.0 0.5 Output Admittance vs. Frequency yfe = gfe + jbfe VCE = 6 V yoe = goe + jboe VCE = 6 V 300 -40 200 100 70 f = 50 MHz IC = 1 mA 2 3 5 0.1 0.2 0.3 0.4 0.5 Output Conductance goe (mS) 6 2SC1342 Input Admittance vs. Collector to Emitter Voltage Reverse Transfer Admittance yre (mS) 20 Input Admittance yie (mS) bie 10 gie Reverse Transfer Admittance vs. Collector to Emitter Voltage -1.0 bre -0.5 -0.2 -0.1 -0.05 gre Yre = gre + jbre IC = 1 mA f = 100 MHz 5 2 Yie = gie + jbie IC = 1 mA f = 100 MHz -0.02 -0.01 1 2 5 10 20 Collector to Emitter Voltage VCE (V) 1 1 2 5 10 20 Collector to Emitter Voltage VCE (V) Forward Transfer Admittance vs. Collector to Emitter Voltage 100 Output Admittance yoe (mS) Forward Transfer yfe (mS) Yfe = gfe + jbfe IC = 1 mA f = 100 MHz gfe 20 bfe 2.0 Output Admittance vs. Collector to Emitter Voltage 50 1.0 boe 0.5 Yoe = goe + jboe IC = 1 mA f = 100 MHz 10 0.2 goe 5 1 2 5 10 20 Collector to Emitter Voltage VCE (V) 0.1 1 2 5 10 20 Collector to Emitter Voltage VCE (V) 7 2SC1342 Input Admittance vs. Collector Current Yie = gie + jbie VCE = 6 V f = 100 MHz bie Reverse Transfer Admittance yre (mS) 50 Input Admittance yie (mS) -1.0 -0.5 Yre = gre + jbre VCE = 6 V f = 100 MHz bre Reverse Transfer Admittance vs. Collector Current 20 10 5 -0.2 -0.1 -0.05 2 1.0 0.5 0.1 gie gre -0.02 -0.01 0.1 0.2 0.5 1.0 2 5 Collector Current IC (mA) 10 0.2 0.5 1.0 2 5 Collector Current IC (mA) 10 Forward Transfer Admittance vs. Collector Current Forward Transfer Admittance yfe (mS) 100 50 20 10 5 2 1 0.1 gfe bfe Output Admittance yoe (mS) Yfe = gfe + jbfe VCE = 6 V f = 100 MHz 5 2 1.0 0.5 Output Admittance vs. Collector Current boe Yoe = goe + jboe VCE = 6 V f = 100 MHz goe 0.2 0.1 0.05 0.1 0.2 0.5 1.0 2 5 Collector Current IC (mA) 10 0.2 0.5 1.0 2 5 Collector Current IC (mA) 10 8 Unit: mm 4.8 0.3 3.8 0.3 2.3 Max 0.45 0.1 0.7 0.60 Max 12.7 Min 5.0 0.2 0.5 1.27 2.54 Hitachi Code JEDEC EIAJ Weight (reference value) TO-92 (2) Conforms Conforms 0.25 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. |
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